IRFU3303 |
RFQ for IRFU3303 |
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| Technical/Catalog Information | IRFU3303PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 33A |
| Rds On (Max) @ Id, Vgs | 31 mOhm @ 18A, 10V |
| Input Capacitance (Ciss) @ Vds | 750pF @ 25V |
| Power - Max | 57W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 29nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFU3303PBF IRFU3303PBF |
| Product | Manufacturers | Pack | D/C |
| IRFU3303 | - | I-pak | 07+ |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Features |
| Ultra Low On-ResistanceSurface Mount (IRFR3303)Straight Lead (IRFU3033) Advanced Process TechnologyFast SwitchingFully Avalanche Rated |
|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
33 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
21 | |
| IDM | Pulsed Drain Current |
120 | |
| PD @TC = 25°C | Power Dissipation |
57 |
W |
| Linear Derating Factor |
0.45 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
95 |
mJ
|
| IAR | Avalanche Current |
18
|
A |
| EAR | Repetitive Avalanche Energy |
5.7 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
SupplierPost a Buying LeadPDF / DatasheetRelated PDFRelated Models |